The Center for Nanoscale Systems' Nanofabrication Facility (CNS-NF), offers resource and staff support for fabricating and characterizing nanoscale devices and structures.
The facility currently operates the 10,000 sq.ft. LISE Cleanroom with leading-edge equipment capable of electron-beam and optical lithography, physical and chemical vapor deposition, dry and wet processing, metrology, and device characterization.
Characterization Electronics coupled to Signatone probe station.
"The SP-3 has a turbo-pumped chamber that reaches a vacuum in the 10-7 Torr range with a pump-down time of ~1 hour. Three shuttered magnetron guns each contain 2" diameter targets. Two DC guns for deposition of conductive materials and one RF gun for deposition of conductive or non-conductive materials. Argon flow and chamber pressure control for optimizing deposition conditions. O2 mass flow controlled process gas for reactive sputtering. Heated rotating substrate holder that maintains temperature control up to 800oC for manipulation of film crystal structure, and accommodates substrates up to 4" in diameter.
Some Targets Available for Use: Ag, Al, Cr, Cu, Ge, Mo, Nb, Pd, Si, Ti, Al2O3, ITO, LiCoO2, SiO2, TiO2, ZnO"
"The SP-2 has a turbo-pumped main chamber that reaches a vacuum in the low 10-8 Torr range and a turbo-pumped load lock chamber for fast pump-down times. Six shuttered magnetron guns containing two inch diameter targets. Three DC guns for deposition of conductive materials and three RF guns for deposition of non-conductive materials. Argon flow and chamber pressure control for optimizing deposition conditions. N2 and O2 Mass Flow Controlled gas lines for reactive sputtering. Heated substrate holder that maintains temperature control up to 800oC before, during and/or after deposition. Substrate holder can be rotated and accommodates substrates up to 4" in diameter. Substrate bias for plasma assisted substrate pre-cleaning or plasma assisted deposition.
Some Targets Available for Use: Ag, Al, Cr, Cu, Ge, Mo, Nb, Pd, Si, Ti, Al2O3, ITO, LiCoO2, SiO2, TiO2, ZnO"
"The Anatech 106 oxygen plasma barrel asher is a useful tool for quickly removing thin layers of organic contamination."
Diamond deposition system.
"CDE 4 point probe (4pp) ResMap 178 is a precision instrument for measuring the sheet resistivity of a conductive media (metal and semiconductor applications)."
"Denton EE-4 is an electron beam deposition tool with a 6-position hearth capable of depositing nanoscale films of non-magnetic metals in a vacuum environment on the order of e-7 torr. EE-4 has a dual chamber design that affords the deposition materials to remain under vacuum during sample load-in. EE-4 can accommodate up to five 3" diameter wafers, or multiple small samples/pieces of wafers on rotating substrate holders. Substrate heating is available up to 200 degrees Celsius through quartz lamps. The sample chamber can be isolated to accommodate oxide processes. Depositions and pump-down/venting sequences are automated utilizing an onboard PLC that synchronizes these operations."
"Ultra high precision 100 keV Electron Beam Lithography System. Minimum line width 7nm; maximum wafer size 8". Laser interferometer stage with stitching accuracy 30nm."
"Fineplacer Lambda Manual Sub-Micron Flip-Chip Bonder provides accurate alignment and placement of a device chip to a substrate as an advanced form of chip interconnection. During the bonding process, both chip and substrate are typically heated to an alloying temperature of the interconnect material. Also available is a heated pick and place tool which allows for heating the device chip in a full thermocompression bonding process."
"The FLX-2320-S determines stress by measuring the curvature change of pre- and post- film deposition. It can measure film stress from -65ºC to 500ºC at a heating rate up to 30ºC/min. Stress variation with temperature is able to be used to characterize film properties, such as moisture concentration, phase changes, thermal expansion, volume changes, and plastic deformations."
"The MMR Hall and Van der Pauw Measurement System can be used to analyze the electrical properties of semiconducting films in the temperature range of 80K-730K (-190°C- 455°C) with a variable magnetic field up to 1.4 Tesla (14,000 G). The system is designed for samples up to 10x10 mm in size with probe/contact configurations consisting of 2.5, 5, and 7.5 mm center to center spacing. The source/meter is capable of supplying current from 1 pA to 10 mA and Vmax= 2.3V. The system reports: resistivity, sheet resistance, majority carrier type and concentration, mobility, and Hall coefficient as a function of temperature with a user friendly software package."
"The Heidelberg DWL 66 is a high resolution, laser-based maskless optical lithography system, used at CNS for writing photomasks. The tool also has the capability to write directly on substrates such as silicon and quartz wafers."
2-40 mm write heads, backside alignment tool, high resolution interferometer.
"Table top rapid thermal annealer capable of processing up to 6” wafers and small samples on a bare Si wafer. Processing can be done under vacuum or at atmospheric pressure using argon, nitrogen, or forming gas. Temperatures up to 800 oC sustained or up to 1000 oC for short intervals."
"Key High Vacuum TE-1 is a three-source thermal evaporation system for sequentially depositing thin films by resistive heating."
"1.5K Probe Station: Although temperature can be stabilized at <1.5K, employing various heater will yield stable operation up to 400K."
"Three scribing modes are provided in this machine, including scribing, notching, and pecking, for different applications where the clean and precise scribing/cleaving is required."
"The spin rinse dryer is a MicroProcess two-stack system for 4"/100mm and 6"/150mm wafer rinsing and drying. All water supplied to this system is 18Mohm deionized water. The system employs in-line resistivity monitors to ensure adequate DI water rinsing of chemicals from a wafer and its cassette."
"Atmospheric operation in forming gas, oxygen, argon or nitrogen. Up to (50) programmable steps per recipe. Typical ramp rate: 10-30C/sec."
"The Raith 150 is an ultra-high resolution electron beam lithography system used for writing complex patterns in resists at resolutions of 50 nm for direct-write lithographic applications. The system also has a Scanning Electron Microscope to facilitate imaging and navigation of the sample."
"The Samco UV-Ozone cleaner uses atomic oxygen, produced via the decomposition of ozone, to remove organic materials from substrates."
"Equipment description and usage: SHARON EE-3 is an e-beam evaporation system suitable for depositing metal thin films. The system has a six-pocket e-gun with a 10 kW power supply. Film thickness is in-situ monitored by quartz crystal monitor. The systems vacuum is supported by a cryopump and an oil-free roughing pump. Vacuum can reach 10e-8 torr range."
"SHARON TE-3 is a four-source thermal evaporation system with one 2.5-kW power supply for sequential resistive-heated deposition."
"SHARON TE-4 is a four-source thermal evaporation system for depositing thin films by resistive heating."
"SHARON TE-5 is a three-source thermal evaporation system for depositing thin films by resistive heating."
"The SouthBay reactive ion etcher is for anisotropic etching. It is a capacitive coupled parallel plate plasma reactor and equipped with 200W RF generator, manual matching network, 6” sample stage, and turbo pump. Available etching gases with this tool include SF6, CF4, CHF3, O2, and Ar.
RIE-1 can be used to etch Si, SiO2, Si3N4, W, Ti, and other substrate materials."
"This STS PECVD system is a dual frequency powered parallel electrode reactor. Its top electrode is powered with two generators. One is a standard rf and also called high frequency power supply (HF, 13.56 MHz). Its power control range is 10W to 600W. The second one is a low frequency (LF, 380 kHz) power supply with a power range of 10W to 1000W. The tool has three operation modes, HF, LF, and MF (mixed frequency). Under MF, the top electrode is powered alternately with HF and LF to tailor film stress by varying the HF/LF power-on ratio. The substrate temperature control is from room temperature to 400C.
Films that can be deposited using this tool include: SiO2, Si3N4, low-stress Si3N4, amorphous Si, phosphorus and boron doped all above films."
"The STS ICP RIE is dedicated for etch of silicon-based materials, which include Si, SiO2, and Si3N4."
"The SUSS MA6 Mask Aligner is the highest resolution contact mask aligner available at the CNS, with sub-micron feature capability in positive tone resists."
"The MJB3 mask aligner can resolve features to a few microns, on substrates up to 3 inches in diameter."
"The MJB4 Mask Aligner allows different type of contact exposures (vacuum, hard, soft proximity contact) for different size sample (up to 4 inch in diameter)."
"Furnace is a general purpose atmospheric annealing system. Its operating temperature range is 200-1100C in atmosphere, N2, O2 or 5% forming gas (H2/N2) ambients."
"The LPCVD TEOS Furnace is a low pressure CVD furnace with a 18" flat zone capable of processing up to 6" wafers and smaller samples as well. Process gases available are SiH4 and O2. Thickness to 1 micron Pressure 300 - 375 mtorr Temperature 375'C Index 1.44 - 1.47 Uniformity is 3% over 6."
"The Non metal Anneal furnace is an atmospheric furnace with 18" flat zone capable of processing 6" wafers and smaller size samples as well. The furnace is equipped with N2, O2 and H2 forming gas mixtures for inert processing. it also has O2 for dry oxidation as well."
"The LPCVD Polysilicon is a low pressure CVD furnace with 18" flat zone and capable of processing up to 6" wafers. Process gases available are SiH4, Ar/10% Phos and N2/10% Diborane for insitu doping."
"The LPCVD Nitride furnace has a flat zone of 18" and capable of processing up to 6" wafers and also smaller samples. process gasses provided are SiH2Cls, NH3 and N2O."
"The metal anneal furnace is an atmospheric furnace with 18" flat zone and capable of processing up to 6" wafers. the furnace provides N2 and H2forming gas mixture for inert ambient processing."
"This LPCVD TEOS Silicon Dioxide Furnace is a low pressure CVD furnace with a precursor vapor Tetra Ethyl Ortho Silicate, it is capable of processing wafer up to 6" and also smaller samples."
"This furnace is for Thermal Oxidation and is an atmospheric furnace with an eighteen inch flat zone capable of processing wafers up to 6 inch diameter, as well as smaller samples as well. it also is equipped with an external Hydrogen torch for pyrogenic wet oxidation. There is also oxygen available for Dry oxidation and Nitrogen for anneals."
"Reactive Ion Etch, Unaxis Shuttleline ICP for III-V. Etching processes have been developed for several III-V materials including GaAs, AlGaAs, InP, AlInAs-GaInAs multilayer, and others."
"Dektak 6M profilometer measures the surface topography electromechanically by moving a sample beneath a diamond-tipped stylus."
Two copies of this profilometer are available.
"Imaging modes include contact, tapping, lateral force, torsion resonance, force imaging, magnetic force microscopy, electric force microscopy, nanolithography and nano-manipulation."
"Wedge bonder configured for aluminum wire (.001”). It will attach to pads down to 100 microns square in a feature density of 150 microns (pad to pad)."
"Woollam V-VASE32 vertical angle spectroscopic ellipsomer is used for non-invasive characterizing of multilayer film thickness, optical constants, film composition, crystallinity, surface and interface roughness, anisotropy, birefringence, bandgap and electronic transitions."